2SB1115 features world standard miniature package. low v ce(sat) :v ce(sat) =-0.2v at 1a absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -6 v collector current i c -1 a collector current (pulse) * i c -2 a total power dissipation p t 2w junction temperature t j 150 storage temperature range t stg -55to+150 * pulsed: pw 10 ms, duty cycle 50% electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-60v,i e = 0 -100 na emitter cutoff current i ebo v eb =-6.0v,i c = 0 -100 na v ce =-2.0v,i c = -100 ma 135 340 600 v ce =-2.0v,i c = -1.0a 100 200 collector saturation voltage * v ce(sat) i c = -1.0a, i b = -50 ma -0.2 -0.3 v base saturation voltage * v be(sat) i c = -1.0a, i b = -50 ma -0.9 -1.2 v base-emitter voltage * v be v ce =-2.0v,i c = -50 ma -600 -700 v gain bandwidth product f t v ce =-2.0v,i e = -100 ma 80 120 mhz output capacitance c ob v cb =-10v,i e =0,f=1.0mhz 25 pf * pulsed: pw 350 s, duty cycle 2% dc current gain * h fe h fe classification marking ym yl yk h fe 135 270 200 400 300 600 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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